Kırkbınar, Mineİbrahimoğlu, ErhanDemir, AhmetÇalışkan, Fatih2024-10-032024-10-0320240921-510710.1016/j.mseb.2024.1177222-s2.0-85204534915https://doi.org/10.1016/j.mseb.2024.117722https://hdl.handle.net/11501/1532The study focused on the relaxation and polarisation mechanisms of Al/(rGO:ZnO core–shell)/pSi/Al MOS structures. For this purpose, the rGO:ZnO core–shell structures were synthesised by sol–gel procedures and coated on pSi by spin-coating. The structures were characterized as chemical, morphological and micro-structural using FESEM-EDS, AFM, XRD and Raman analysis. Additionally, the capacitance (C), conductance (G/ω), dielectric permittivity (ε′ and ε″), loss factor(tanδ), electric modulus(M′ and M″) of the samples were successfully examined by DS over the wide range of frequencies (100 Hz-1 MHz) for determining dielectric parameters. Three distinct regions were visible on the C-V and C-ω plots: accumulation (−4 to 0 V), depletion (0 to 2 V), and inversion (2 to 4 V). Two relaxation times (10-4s-10-7s) were obtained in ε′-V and ε′-ω graphs between 1–100 kHz (region 1) and 100 kHz-1 MHz (region 2). The relaxation times were according to the Maxwell-Wagner and dipolar polarisation mechanism. As a result, the capacitive effect was observed and the equivalent RC circuit obtained from the Cole-Cole diagrams allowed the samples to be used in energy storage or different electronic applications.eninfo:eu-repo/semantics/closedAccessCore–Shell StructuresDielectric PropertiesMOS DevicesReduced Graphene OxideArticleQ1310