Voss, S. AkyolMatur, U. CanciCimenoglu, H.Baydogan, N.2024-06-132024-06-1320231567-17391878-167510.1016/j.cap.2023.05.0132-s2.0-85160429153https://doi.org/10.1016/j.cap.2023.05.013https://hdl.handle.net/11501/1142Electron beam effect on swelling at the sol-gel derived thin film has been examined for chalcopyrite copper indium gallium diselenium thin-film semiconductor nanolayers with optical pransparent features. The copper indium gallium diselenium layers with the optical transparent features were irradiated by negatively charged electron beam which was emmited from Sr-90 radioisotope with 2.86 mCi activity. The swelling was the important parameters to use this thin film at the optoelectronic layers that have affected the safety and operating life of the equipments and systems in nuclear applications.eninfo:eu-repo/semantics/closedAccessThin FilmSol-GelChalcopyriteCigsArticle23Q2952WOS:001013184900001N/A