Bavdo?an, N.Canci, U.Alcyol, S.Cimenoglu, H.2024-06-132024-06-132014978111888972510.1002/9781118889879.ch472-s2.0-84899727565https://doi.org/10.1002/9781118889879.ch47https://hdl.handle.net/11501/1003143rd Annual Meeting and Exhibition, TMS 2014 -- 16 February 2014 through 20 February 2014 -- San Diego, CA -- 104909The effects of deposition temperature on copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS) thin-film were examined to apply this layer in the CIGS solar cells. Electrical resistivity of CIGS layers was determined after CIGS thin films were deposited by sol-gel dip coating technique on substrates. The desired electrical resistivity is determined after annealing. The variations in electrical resistivity are investigated for the use in CIGS solar cells.eninfo:eu-repo/semantics/closedAccessCIGS thin filmElectrical propertiesIrradiaitonSolar cellCopper compoundsDepositionElectric conductivityElectric propertiesGallium compoundsIndium compoundsSelenium compoundsSol-gel processSolar cellsCIGS solar cellsCIGS thin filmsCopper indium gallium diselenideCu(In ,Ga)Se2Deposition temperaturesIrradiaitonSol-gel dip coating techniqueThin filmsConference Object381N/A379