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    Effect of electron beam improved dielectric function on optical properties of sol-gel derived CuIn1-XGaXSe2 thin-film
    (Elsevier, 2022) Voss, S. Akyol; Matur, U. Canci; Cimenoglu, H.; Baydogan, N.
    Electron beam has been applied as a practical posttreatment process for the surface modification at the CuIn1-XGaXSe2 thin film. The rise of the film thickness indicated the advantages of the modified surface-related properties (such as the optical parameters to develop an optimum optical model) via enriching the micro-structure with the negative charged beta particles by using Sr-90 radioisotope. The effect of negatively charged beta particles on dielectric constants was examined at two different dose levels (3 and 9.1 Gy) by using Sr-90 radioisotope. The application of the electron beam to the thin film surface caused the slight changes in refrac-tive index (n), extinction coefficient (k) and optical absorption coefficient. The increase of refractive index and the improvement of absorption coefficient provided to distinguish clearly the decrease in extinction coefficient and the decline in energy band gap as the result of the rise of the beta dose at the thin-film. The slight variations in dielectric constants were performed by encouraging more dense structure to form the optimum crystalline network at the thin film (applied beta dose). The application of beta dose favoured inventive variations in the refractive index. The applied two different beta dose levels were below-3.1 Gy and above-9 Gy. The beta dose level at-9 Gy was-3 times dose value of 3.1 Gy (applied as a security value for the utilization of this thin film at the extreme environments such as international space station orbit). The refractive index stated its importance specifying the rise of the bending of light in the thin film structure.
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    Swelling modification by electron beam at chalcopyrite copper indium gallium diselenium thin-film controlled optical features
    (Elsevier, 2023) Voss, S. Akyol; Matur, U. Canci; Cimenoglu, H.; Baydogan, N.
    Electron beam effect on swelling at the sol-gel derived thin film has been examined for chalcopyrite copper indium gallium diselenium thin-film semiconductor nanolayers with optical pransparent features. The copper indium gallium diselenium layers with the optical transparent features were irradiated by negatively charged electron beam which was emmited from Sr-90 radioisotope with 2.86 mCi activity. The swelling was the important parameters to use this thin film at the optoelectronic layers that have affected the safety and operating life of the equipments and systems in nuclear applications.
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    The Growth and Structural Characterization in Sol-Gel Derived Culn1-x,GaxSe2 Thin Films by Controlling pH-Value
    (Amer Scientific Publishers, 2019) Voss, S. Akyol; Matur, U. Canci; Cimenoglu, H.; Baydogan, N.
    Cu(In,Ga)Se-2 thin-film samples were derived at different pH-values changing from 1 to 4 via sol-gel dip coating technique to obtain cost-effective polycrystalline thin film after annealing at 150 degrees C in air. The structural characterization and the physical properties (such as optical and electrical properties) were investigated for different pH-values. The optimum optical properties were determined to obtain a suitable absorber material. The favourable energy band gap and electrical conductivity were determined by controlling the pH-value of the film solution between 1.5-2.0 pH-value to use them at economical optoelectronic applications. The increase of pH-value presented the relation between the electrical conductivity and optical absorbance. The increase of pH-value to similar to 2 contributed the increase of the electrical conductivity. The minimum optical band gap (at 1.24 eV) was obtained at 2 pH value.