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Annealing time effect on CIGS thin films
(Emerald Group Publishing Ltd, 2020) Canci Matur, Utku; Baydoğan, Nilgün
Chalcopyrite copper indium gallium (di)selenide (Cu(In, Ga)Se-2 (CIGS)) thin film has been examined as an absorber layer for solar cells because of its suitable absorption value, stability and economy in manufacture. CIGS thin films belong to the I-III-VI2 group of the periodic table with the appropriate direct bandgap (1.5 eV). In this study, CIGS thin films were annealed at similar to 200 degrees C for four different annealing times (15, 30, 45 and 60 min) to investigate the effect of the annealing time on the crystalline structure and optical properties of CIGS thin films prepared by using the sol-gel dip-coating technique. CIGS thin films annealed at similar to psi 200 degrees C for 60 min were found to have the best structural and optical properties in this study. As the crystallite size increased with the rise in the annealing time, the lattice strain decreased, indicating the elimination of crystallite defects in the CIGS thin-film structure. Hence, the structural changes affected the optical properties slightly and the rise in the optical absorbance (A%) resulted in a decrease in the optical transmittance (T%).
Changes in gamma attenuation behaviour of sol-gel derived CIGS thin film irradiated using Co-60 radioisotope
(Elsevier Science Sa, 2017) Canci Matur, Utku; Baydoğan, Nilgün
Copper indium gallium (di) selenide-Cu(In, Ga)Se-2 (CIGS) thin films were fabricated on soda-lime silicate glass substrates using a layer-by-layer sol-gel dip-coating method. The irradiation procedure was handled using a certified Co-60 radioisotope at two different absorbed dose levels (at 0,03 and 0,05 Gray (Gy)) to examine the enhancements of optical and electrical properties of the CIGS thin films. Cs-137 (with 0,662 MeV) and Co-60 (with similar to 1,25 MeV) radioisotopes were used to evaluate the effect of the absorbed dose on CIGS thin films with different thicknesses by the gamma transmission technique. The irradiated CIGS thin films exhibited an improved optical band gap and electrical resistivity at the optimal layer thickness. This improvement occurs due to the enhancement of crystalline properties in comparison with those of non-irradiated CIGS thin films. The CIGS thin film of similar to 300 nm (11 layers) thickness was suitable for comparing changes in the linear attenuation coefficient after the irradiation process at two different absorbed dose levels. In the experiments, the gamma transmission technique was utilized to investigate the gamma attenuation properties of non-irradiated and irradiated CIGS thin films at different thicknesses against Cs-137 (with 0,662 MeV) and Co-60 (with similar to 1,25 MeV) gamma radioisotope sources. The irradiation process and the increase of thickness of CIGS thin films caused a higher linear attenuation coefficient, higher absorption and improvement in electrical conductivity. These results demonstrate the suitability of these materials for solar cell applications in aerospace technology, especially for high-altitude flight operations.
Design today save future
(Istanbul Gedik University, 2019) Yahya, Noorhana; Pereira, Carlos Mourão; Canci Matur, Utku; Özbudak, Özgün; Önal, Feride; Tolon, Mart; Karabuga, Arif
Along with the development of technology, industrialization and rapid population growth have increased the energy demand. The awareness of the energy crisis has led researchers to search for new solutions and use new technologies in this area. Renewable energy has an extremely important place in energy requirement of the countries with domestic resources, reducing the external dependency, diversifying the resources and ensuring sustainable energy usage and minimizing the damages to the environment as a result of energy consumption. Today, around 20 percent of the world’s consumed energy is supply from renewable sources. Despite the high level of dependence on fossil fuels in the current situation, the use of renewable energy has been increasing steadily over the years. The conventional energy sources that already supply most of the energy demand. However, it is estimated that fossil fuels, especially petroleum, will be consumed in the next 200-300 years. In order to be able to produce solutions for this situation, it is necessary to carry out many research/development and production/development projects related to both conventional energy sources and alternative energy sources.
Dielectric and optical properties of Eux(Bi1-x)Sr2CaCu2O6.5 (x=0.3 and 1) samples
(Istanbul Gedik University, 2024) Canci Matur, Utku; Aslan Çataltepe, Özden; Tabanlı, Sevcan
Eu-based copper oxide layered ceramics have some interesting dielectric properties depending on its stoichiometric ratios and elements used in ceramics. In this study, optical properties of EuSr2CaCu2O6.5 and Eu0.3Bi0.7Sr2CaCu2O6.5 samples and dielectric property of EuSr2CaCu2O6.5 sample were investigated for the first time. Negative real permittivity for EuSr2CaCu2O6+x sample was observed at temperature with 373 K and higher temperatures and below than the cross over frequency with 14 Hz. Moreover, it is determined that Eu3+ concentration in the material affects the relative emission intensity.
Effect of electron beam improved dielectric function on optical properties of sol-gel derived CuIn1-XGaXSe2 thin-film
(Elsevier, 2022) Voss, S. Akyol; Canci Matur, Utku; Çimenoğlu, Hüseyin; Baydoğan, Nilgün
Electron beam has been applied as a practical posttreatment process for the surface modification at the CuIn1-XGaXSe2 thin film. The rise of the film thickness indicated the advantages of the modified surface-related properties (such as the optical parameters to develop an optimum optical model) via enriching the micro-structure with the negative charged beta particles by using Sr-90 radioisotope. The effect of negatively charged beta particles on dielectric constants was examined at two different dose levels (3 and 9.1 Gy) by using Sr-90 radioisotope. The application of the electron beam to the thin film surface caused the slight changes in refrac-tive index (n), extinction coefficient (k) and optical absorption coefficient. The increase of refractive index and the improvement of absorption coefficient provided to distinguish clearly the decrease in extinction coefficient and the decline in energy band gap as the result of the rise of the beta dose at the thin-film. The slight variations in dielectric constants were performed by encouraging more dense structure to form the optimum crystalline network at the thin film (applied beta dose). The application of beta dose favoured inventive variations in the refractive index. The applied two different beta dose levels were below-3.1 Gy and above-9 Gy. The beta dose level at-9 Gy was-3 times dose value of 3.1 Gy (applied as a security value for the utilization of this thin film at the extreme environments such as international space station orbit). The refractive index stated its importance specifying the rise of the bending of light in the thin film structure.
Effects of production parameters on characteristic properties of Cu(In,Ga)Se2 thin film derived by solgel process
(Springer International Publishing Ag, 2015) Akyol, Şengül; Canci Matur, Utku; Baydoğan, Nilgün; Çimenoğlu, Hüseyin
Cu(In,Ga)Se-2 (CIGS) thin films were obtained by solgel method on sodalime glass substrates, economically. The optimum optical properties of CIGS thin films are obtained by varying the film layers. Besides, the solgel-derived CIGS thin films were thermally treated at different temperatures from 135 degrees C up to 200 degrees C. These results indicate that the transparent CIGS thin films derived by solgel process can be good candidates for the applications in optoelectronic devices.
Experimental study and numerical simulation for the development of critical performance parameters of eco-friendly Cu2ZnSnS4-based solar cells
(Elsevier Science Ltd, 2023) Belarbi, Faiza; Canci Matur, Utku; Tamin, C.; Rahal, Wassila Leila; Benghabrit, S.; Baydoğan, Nilgün; Adnane, Mohamed
This work aims to study the basic Characteristics of CZTS thin films produced by chemical solution process in addition to a numerical study of the CZTS-based solar cells. In this context, eco-friendly and cost effective thin films of CZTS were coated on glass substrates by sol-gel dip-coating method. This method is used to grow crystalline CZTS thin films without sulfidation processes. The structural and optical properties have been carried out by X-ray Diffraction (XRD) and UV/Visible spectroscopy. The oxidation states of CZTS thin film have been studied by, X-ray photoelectron spectroscopy XPS analysis. The performance of CZTS solar cells has been investigated with the simulator SCAPS-1 D. The impact of different parameters like the CZTS absorber layer thickness, the carrier doping density and the operation temperature has been studied to get better understanding of the properties of our cells.
Hayvan gübresinden biyogaz üretim potansiyelinin belirlenmesi: Ankara, Gaziantep, Kars*
(TMMOB Makina Mühendisleri Odası, 2024) Canci Matur, Utku; Atasayın, Aytaç
Gelişen teknoloji ve artan nüfusa paralel olarak enerji talebi gün geçtikçe hızla artış göstermiştir. Enerji talebinin artışı bu alanda yapılan çalışmalara hız kazandırmıştır. Halihazırda emre amade kullanılan konvansiyonel enerji kaynakları tükenebilme riski ve olumsuz çevre etkileri nedeniyle kullanımına sınır getirilmek istenen enerji kaynakları durumuna gelmiştir. Yenilenebilir enerji kaynakları bu anlamda konvansiyonel enerji kaynaklarına alternatif oluşturmuşlardır. Tükenme riski olmayan çevre dostu yenilenebilir enerji kaynakları son dönemlerde sıklıkla çalışılan konulardandır. Yenilenebilir enerji kaynağı olarak biyokütlenin kullanılması tarım ve hayvancılık alanında gelişmeye sebep olmuştur. Yapılan tarım ve hayvancılıkta atık olarak görünen ürünler değerlendirilerek, geri kazanım sağlanmış olacaktır. Hayvan dışkısı doğada kaldığı sürece açığa çıkan metan gazı sera etkisi yaratarak küresel ısınmaya neden olur. Suya karıştıktan sonra insan sağlığına zararlı hale gelir. Bu nedenle elektrik ve ısı enerjisi elde ederek geri dönüşümlü olarak bertaraf edilmesi önem arz etmektedir. Yapılan bu çalışma kapsamında ülkemizin farklı bölgelerinde bulunan Ankara, Gaziantep ve Kars illerindeki hayvan dışkısının toplanabilirliği dikkate alınarak biyogazdan elde edilebilecek potansiyel elektrik enerjisi araştırılmıştır. Bu kapsamda, Ankara ilinden 375.497,55 Mega Watt Saat Elektrik /Yıl (MWhe/yıl), Gaziantep ilinden 115.452,27 MWhe/yıl, Kars ilinden de 198.691,4 MWhe/yıl elektrik enerjisinin biyogazdan elde edilebilme potansiyeline sahip oldukları belirlenmiştir.
I-V characterization of the irradiated ZnO:Al thin film on P-Si wafers by reactor neutrons
(Springer Int Publishing Ag, 2015) Günaydın, Emrah; Canci Matur, Utku; Baydoğan, Nilgün; Tuğrul, A. Beril; Çimenoğlu, Hüseyin; Yeşilkaya, Serço Serkis
ZnO:Al/p-Si heterojunctions were fabricated by solgel dip coating technique onto p-type Si wafer substrates. Al-doped zinc oxide (ZnO:Al) thin film on p-Si wafer was irradiated by reactor neutrons at ITU TRIGA Mark-II nuclear reactor. Neutron irradiation was performed with neutron/gamma ratio at 1.44 x 10(4) (n cm(-2) s(-1) mR(-1)). The effect of neutron irradiation on the electrical characteristics of the ZnO: Al thin film was evaluated by means of current-voltage (I-V) characteristics for the unirradiated and the irradiated states. For this purpose, the changes of I-V characteristics of the unirradiated ZnO: Al thin films were compared with the irradiated ZnO: Al by reactor neutrons. The irradiated thin ZnO: Al film cell structure is appropriate for the usage of solar cell material which is promising energy material.
Investigation of electrical properties of CIGS thin films derived by sol-gel process
(Minerals, Metals and Materials Society, 2014) Baydoğan, Nilgün; Canci Matur, Utku; Akyol, Şengül; Çimenoğlu, Hüseyin
The effects of deposition temperature on copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS) thin-film were examined to apply this layer in the CIGS solar cells. Electrical resistivity of CIGS layers was determined after CIGS thin films were deposited by sol-gel dip coating technique on substrates. The desired electrical resistivity is determined after annealing. The variations in electrical resistivity are investigated for the use in CIGS solar cells.
Sol-gel derived Cu(In,Ga)Se2 thin film solar cell
(American Scientific Publishers, 2017) Canci Matur, Utku; Baydoğan, Nilgün
Well crystallized copper indium gallium (di) selenide-Cu(In, Ga) Se-2 (CIGS) thin films were deposited on conducting substrates (molybdenum coated soda-lime glass) by sol-gel dip coating technique. The n-type cadmium sulfide (CdS) buffer layer was produced by chemical bath deposition (CBD) technique and the n-type ZnO: Al thin film has been used as transparent conductive layer was deposited by sol-gel dip coating technique. The selenium powder was dissolved in trioctylphosphine (TOP, 90%, technical grade) solution during the experiment process to make some progress on scientific innovation of CIGS thin films derived by sol-gel dip coating technique. Hence, the heterojunction at Mo/CIGS/CdS/ZnO: Al/Al configuration was produced on a soda-lime silicate glass substrate (SLSG). SLSG/Mo/CIGS/CdS/ZnO: Al/Al heterojunction was fabricated by using a practical economical and more eco-friendly technique. The structural, optical and current-voltage (I-V) characteristics of the CIGS based heterojunction was analysed by using the SLSG/Mo/CIGS/CdS/ZnO: Al/Al device configuration. The optoelectronic properties such as the open-circuit voltage (V-oc), the short-circuit current (I-sc), the fill factor (FF), the ideality factor (n) etc. of the CIGS thin film solar cells were examined depending on the annealing temperature at 500 degrees C for 45 minutes in air. The CIGS thin film heterojunctions which has been obtained present diode like rectifying behaviour besides photovoltaic behaviour under UV illumination.
Swelling modification by electron beam at chalcopyrite copper indium gallium diselenium thin-film controlled optical features
(Elsevier, 2023) Voss, S. Akyol; Canci Matur, Utku; Çimenoğlu, Hüseyin; Baydoğan, Nilgün
Electron beam effect on swelling at the sol-gel derived thin film has been examined for chalcopyrite copper indium gallium diselenium thin-film semiconductor nanolayers with optical pransparent features. The copper indium gallium diselenium layers with the optical transparent features were irradiated by negatively charged electron beam which was emmited from Sr-90 radioisotope with 2.86 mCi activity. The swelling was the important parameters to use this thin film at the optoelectronic layers that have affected the safety and operating life of the equipments and systems in nuclear applications.
The characteristic behaviors of solgel-derived CIGS thin films exposed to the specific environmental conditions
(Springer Int Publishing Ag, 2015) Canci Matur, Utku; Akyol, Şengül; Baydoğan, Nilgün; Çimenoğlu, Hüseyin
This study was performed to determine the time effect on optical properties of solgel-derived Cu(In, Ga)Se-2 (CIGS) thin films at the specific environmental conditions. For this purpose, solgel-derived CIGS thin films were exposed to a variety of environmental conditions at different steps of the production process from the preparation of solution to deposition of substrate. The optical properties of the CIGS thin films changed with the rise of time at the specific environmental conditions such as the increase of the aging time of solgel solution (from 18 to 35 days) and the rise of the annealing time of the thin film (from 15 to 60 min). The CIGS solution was aged with the rise of time to investigate the effect of the aging time on optical properties of the thin film. The films were deposited by aged colloidal solution which kept at -5 degrees C in a dark environment in order to extend the useful life of solution. The color of the colloidal solution changed slightly with the increase in the elapsed time after the preparation of the solution. The increase of the annealing time has affected the optical behaviors of the CIGS thin films with the changes of the surface morphology.
The growth and structural characterization in sol-gel derived Culn1-x,GaxSe2 thin films by controlling pH-value
(American Scientific Publishers, 2019) Voss, S. Akyol; Canci Matur, Utku; Çimenoğlu, Hüseyin; Baydoğan, Nilgün
Cu(In,Ga)Se-2 thin-film samples were derived at different pH-values changing from 1 to 4 via sol-gel dip coating technique to obtain cost-effective polycrystalline thin film after annealing at 150 degrees C in air. The structural characterization and the physical properties (such as optical and electrical properties) were investigated for different pH-values. The optimum optical properties were determined to obtain a suitable absorber material. The favourable energy band gap and electrical conductivity were determined by controlling the pH-value of the film solution between 1.5-2.0 pH-value to use them at economical optoelectronic applications. The increase of pH-value presented the relation between the electrical conductivity and optical absorbance. The increase of pH-value to similar to 2 contributed the increase of the electrical conductivity. The minimum optical band gap (at 1.24 eV) was obtained at 2 pH value.
The optical properties of CIGS thin films derived by sol-gel dip coating process at different withdrawal speed
(Elsevier Science Bv, 2015) Canci Matur, Utku; Akyol, Şengül; Baydoğan, Nilgün; Çimenoğlu, Hüseyin
The copper indium gallium diselenide Cu(In,Ga)Se-2 (CIGS) thin-films deposited on soda lime silica glass substrates were dip-coated five times and annealed at 180 degrees C. The advantages of CuIn(Ga)Se-2 thin films were its wide compositional tolerance, high conversion efficiency, flexibility, low cost of materials and high optical absorption in the visible spectrum. The effect of the withdrawal speed, on the optical properties of the CIGS thin films derived by sol-gel process detailed clearly in this study by transmission and reflection measurements with controlling the withdrawal speed. The prepared CIGS thin films had p-type conductivity. The significant blue shift of absorption edge as well as tuning of optical band gap was observed with the withdrawal speed. The CIGS thin films at four different withdrawal speeds were such as 60, 120, 200 and 300 mm min(-1) prepared from colloidal suspensions to control the nature of nanospheres in the CIGS texture, because the colloidal solution was utilised as a template to control the particle shape.
Thermal management analysis with different PCMs in Sodium-Ion batteries
(Türkiye Enerji Stratejileri ve Politikaları Araştırma Merkezi (TESPAM), 2024) Canci Matur, Utku; Tüysüz, Cansu; Köse, Ali
The advent of modern technology has led to a significant increase in the utilisation of rechargeable secondary batteries. Despite the sustainability of lithium-ion (Li-ion) batteries, the limited availability of lithium has driven research into alternative energy storage technologies. Sodium-ion (Na-ion) batteries, as a potential alternative to Li-ion batteries, have emerged as a highly promising contender. However, for these batteries to become industrially viable, certain properties such as energy and power density need to be enhanced. To address this issue, batteries have been a focus of research, and battery thermal management systems have been developed. These systems aim to evaluate battery performance, which is strongly influenced by temperature. Effective thermal management ensures that the battery operates within the optimal temperature range. This study models a pouch-type battery and evaluates the effects of phase changing materials (PCM) on battery temperature control. Comparative analysis is conducted using different PCMs to understand their impact. The study analyses the battery's response to specific temperature ranges and assesses how different PCMs affect battery cooling performance. The results provide critical insights for ensuring efficient battery operation. Furthermore, this research supports the broader adoption of Na-ion batteries in industrial applications and contributes to the development of sustainable energy storage systems.
Thermal neutrons effect on improvement of electrical properties at CIGS thin film derived by sol-gel dip coating technique
(Elsevier, 2022) Canci Matur, Utku; Baydoğan, Nilgün
The thermal neutron effect on the copper indium gallium (di)selenide thin film synthesized by the sol-gel dip -coating technique has explained the novel use of this film under extreme conditions (such as neutron irradiation fields). The thin film samples were treated by using the reactor neutrons to obtain the optimum neutron treat-ment for the determination of the variations in the structural characteristics. The gamma filter system has provided the evaluation of the high thermal neutron flux effect on the thin film samples by using the tangential beam tube of ITU TRIGA Mark-II reactor. The influence of the neutron effect on the electrical and optical features was explained by the rise of selenium amount in the thin film. The neutron-treated thin film samples (at 50 at. % Se) had a significant effect on the lowest electrical resistivity depending on the increase of the film density. The equivalent gamma dose of the neutron-treated thin film was determined as a 0.024 Gy dose level for neutron irradiation. The neutron treatment was significant to evaluate the decrease in the sheet resistivity of the thin film at this dose level. The neutron dose has led to a slight decrease in the optical band gap as the result of the thermal and epithermal neutrons' effects on the thin film.
Tracking optical properties of ZnO:Mg thin films: experimental and first principles calculations
(Elsevier Science Ltd, 2022) Canci Matur, Utku; Duru, İzzet Paruğ; Akcan, Doğan
As low-cost transparent conducting oxides (TCO), ZnO based materials have been widely used in flat panels, sensors, glasses and transparent electronic systems. ZnO based thin films are preferable instead of other TCO materials such as Indium Tin Oxides (ITO) due to electrochemical stability, non-toxicity, low cost. The physical and chemical properties of ZnO based devices depend on the stoichiometry, amount of impurity (dopant), and deposition method. In this study Mg doped zinc oxide (MZO) thin films with doping ratio varying from 1% to 5% were deposited by sol-gel dip coating method to improve the physical characters by forming the grain size. Structural and optical properties were investigated by means of XRD analysis, ultraviolet-visible (UV-VIS) and photoluminescence (PL) spectroscopy. Moreover, DFTB + method was preferred to determine electronic properties based on structural information obtained from XRD analysis. Experimentally determined band-gaps were compared with theoretically calculated gap values in which oxygen vacancies are considered.

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