Annealing time effect on CIGS thin films
Küçük Resim Yok
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Emerald Group Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Chalcopyrite copper indium gallium (di)selenide (Cu(In, Ga)Se-2 (CIGS)) thin film has been examined as an absorber layer for solar cells because of its suitable absorption value, stability and economy in manufacture. CIGS thin films belong to the I-III-VI2 group of the periodic table with the appropriate direct bandgap (1.5 eV). In this study, CIGS thin films were annealed at similar to 200 degrees C for four different annealing times (15, 30, 45 and 60 min) to investigate the effect of the annealing time on the crystalline structure and optical properties of CIGS thin films prepared by using the sol-gel dip-coating technique. CIGS thin films annealed at similar to psi 200 degrees C for 60 min were found to have the best structural and optical properties in this study. As the crystallite size increased with the rise in the annealing time, the lattice strain decreased, indicating the elimination of crystallite defects in the CIGS thin-film structure. Hence, the structural changes affected the optical properties slightly and the rise in the optical absorbance (A%) resulted in a decrease in the optical transmittance (T%).
Açıklama
Anahtar Kelimeler
Energy Gap, Solar Cells, Thin Films, Solar-Cell, Electrical-Properties, Neutron-Irradiation, Cuinse2, Gamma, Temperature, Glass
Kaynak
Emerging Materials Research
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
9
Sayı
3
