I-V characterization of the irradiated ZnO:Al thin film on P-Si wafers by reactor neutrons

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dc.contributor.authorGünaydın, Emrah
dc.contributor.authorCanci Matur, Utku
dc.contributor.authorBaydoğan, Nilgün
dc.contributor.authorTuğrul, A. Beril
dc.contributor.authorÇimenoğlu, Hüseyin
dc.contributor.authorYeşilkaya, Serço Serkis
dc.date.accessioned2024-06-13T20:17:47Z
dc.date.available2024-06-13T20:17:47Z
dc.date.issued2015
dc.departmentMeslek Yüksekokulu, Gedik Meslek Yüksekokulu, Mekatronik Programı
dc.descriptionInternational Conference on Energy and Management -- 05-07 June, 2014 -- Istanbul Bilgi University, Turkey
dc.description.abstractZnO:Al/p-Si heterojunctions were fabricated by solgel dip coating technique onto p-type Si wafer substrates. Al-doped zinc oxide (ZnO:Al) thin film on p-Si wafer was irradiated by reactor neutrons at ITU TRIGA Mark-II nuclear reactor. Neutron irradiation was performed with neutron/gamma ratio at 1.44 x 10(4) (n cm(-2) s(-1) mR(-1)). The effect of neutron irradiation on the electrical characteristics of the ZnO: Al thin film was evaluated by means of current-voltage (I-V) characteristics for the unirradiated and the irradiated states. For this purpose, the changes of I-V characteristics of the unirradiated ZnO: Al thin films were compared with the irradiated ZnO: Al by reactor neutrons. The irradiated thin ZnO: Al film cell structure is appropriate for the usage of solar cell material which is promising energy material.
dc.description.sponsorshipIstanbul Bilgi Univ Dept Energy Systems Engn
dc.identifier.doi10.1007/978-3-319-16024-5_16
dc.identifier.endpage178
dc.identifier.isbn978-3-319-16024-5
dc.identifier.isbn978-3-319-16023-8
dc.identifier.startpage171
dc.identifier.urihttps://doi.org/10.1007/978-3-319-16024-5_16
dc.identifier.urihttps://hdl.handle.net/11501/1066
dc.identifier.wosWOS:000380565300016
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.institutionauthorCanci Matur, Utku
dc.institutionauthorid0000-0001-6342-5645
dc.language.isoen
dc.publisherSpringer Int Publishing Ag
dc.relation.ispartofInternational Conference on Energy and Management
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleI-V characterization of the irradiated ZnO:Al thin film on P-Si wafers by reactor neutrons
dc.typeConference Object

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