The Growth and Structural Characterization in Sol-Gel Derived Culn1-x,GaxSe2 Thin Films by Controlling pH-Value
dc.authorid | Cimenoglu, Huseyin/0000-0002-9921-7108 | |
dc.authorid | Baydogan, Nilgun/0000-0001-9843-1615 | |
dc.authorid | Cimenoglu, Huseyin/0000-0002-9921-7108 | |
dc.authorwosid | Cimenoglu, Huseyin/ABB-4129-2020 | |
dc.authorwosid | Baydogan, Nilgun/I-1298-2017 | |
dc.authorwosid | Cimenoglu, Huseyin/ABA-7628-2020 | |
dc.contributor.author | Voss, S. Akyol | |
dc.contributor.author | Matur, U. Canci | |
dc.contributor.author | Cimenoglu, H. | |
dc.contributor.author | Baydogan, N. | |
dc.date.accessioned | 2024-06-13T20:18:18Z | |
dc.date.available | 2024-06-13T20:18:18Z | |
dc.date.issued | 2019 | |
dc.department | İstanbul Gedik Üniversitesi | |
dc.description.abstract | Cu(In,Ga)Se-2 thin-film samples were derived at different pH-values changing from 1 to 4 via sol-gel dip coating technique to obtain cost-effective polycrystalline thin film after annealing at 150 degrees C in air. The structural characterization and the physical properties (such as optical and electrical properties) were investigated for different pH-values. The optimum optical properties were determined to obtain a suitable absorber material. The favourable energy band gap and electrical conductivity were determined by controlling the pH-value of the film solution between 1.5-2.0 pH-value to use them at economical optoelectronic applications. The increase of pH-value presented the relation between the electrical conductivity and optical absorbance. The increase of pH-value to similar to 2 contributed the increase of the electrical conductivity. The minimum optical band gap (at 1.24 eV) was obtained at 2 pH value. | |
dc.identifier.doi | 10.1166/jno.2019.2629 | |
dc.identifier.endpage | 1236 | |
dc.identifier.issn | 1555-130X | |
dc.identifier.issn | 1555-1318 | |
dc.identifier.issue | 9 | |
dc.identifier.startpage | 1230 | |
dc.identifier.uri | https://doi.org/10.1166/jno.2019.2629 | |
dc.identifier.uri | https://hdl.handle.net/11501/1321 | |
dc.identifier.volume | 14 | |
dc.identifier.wos | WOS:000480421400004 | |
dc.identifier.wosquality | Q4 | |
dc.indekslendigikaynak | Web of Science | |
dc.language.iso | en | |
dc.publisher | Amer Scientific Publishers | |
dc.relation.ispartof | Journal of Nanoelectronics and Optoelectronics | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
dc.rights | info:eu-repo/semantics/closedAccess | |
dc.subject | Thin Film | |
dc.subject | Sol-Gel | |
dc.subject | Ph Value | |
dc.subject | Optical-Properties | |
dc.subject | Cell | |
dc.subject | Zno | |
dc.title | The Growth and Structural Characterization in Sol-Gel Derived Culn1-x,GaxSe2 Thin Films by Controlling pH-Value | |
dc.type | Article |