Sol-Gel Derived Cu(In,Ga)Se2 Thin Film Solar Cell

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dc.authoridBaydogan, Nilgun/0000-0001-9843-1615
dc.authorwosidBaydogan, Nilgun/I-1298-2017
dc.contributor.authorMatur, Utku Canci
dc.contributor.authorBaydogan, Nilgun
dc.date.accessioned2024-06-13T20:18:18Z
dc.date.available2024-06-13T20:18:18Z
dc.date.issued2017
dc.departmentİstanbul Gedik Üniversitesi
dc.description.abstractWell crystallized copper indium gallium (di) selenide-Cu(In, Ga) Se-2 (CIGS) thin films were deposited on conducting substrates (molybdenum coated soda-lime glass) by sol-gel dip coating technique. The n-type cadmium sulfide (CdS) buffer layer was produced by chemical bath deposition (CBD) technique and the n-type ZnO: Al thin film has been used as transparent conductive layer was deposited by sol-gel dip coating technique. The selenium powder was dissolved in trioctylphosphine (TOP, 90%, technical grade) solution during the experiment process to make some progress on scientific innovation of CIGS thin films derived by sol-gel dip coating technique. Hence, the heterojunction at Mo/CIGS/CdS/ZnO: Al/Al configuration was produced on a soda-lime silicate glass substrate (SLSG). SLSG/Mo/CIGS/CdS/ZnO: Al/Al heterojunction was fabricated by using a practical economical and more eco-friendly technique. The structural, optical and current-voltage (I-V) characteristics of the CIGS based heterojunction was analysed by using the SLSG/Mo/CIGS/CdS/ZnO: Al/Al device configuration. The optoelectronic properties such as the open-circuit voltage (V-oc), the short-circuit current (I-sc), the fill factor (FF), the ideality factor (n) etc. of the CIGS thin film solar cells were examined depending on the annealing temperature at 500 degrees C for 45 minutes in air. The CIGS thin film heterojunctions which has been obtained present diode like rectifying behaviour besides photovoltaic behaviour under UV illumination.
dc.identifier.doi10.1166/jno.2017.2023
dc.identifier.endpage358
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85018779721
dc.identifier.scopusqualityN/A
dc.identifier.startpage352
dc.identifier.urihttps://doi.org/10.1166/jno.2017.2023
dc.identifier.urihttps://hdl.handle.net/11501/1320
dc.identifier.volume12
dc.identifier.wosWOS:000393946400009
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.ispartofJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCigs
dc.subjectDiode
dc.subjectSol-Gel
dc.subjectSolar Cell
dc.subjectThin Film
dc.subjectOptical-Properties
dc.subjectZno
dc.subjectTemperature
dc.subjectCuinse2
dc.subjectGrowth
dc.subjectSize
dc.titleSol-Gel Derived Cu(In,Ga)Se2 Thin Film Solar Cell
dc.typeArticle

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