Investigating ultra-thin rGO coated ZnO core-shell structures in MOS devices: electrical/dielectric characteristics and relaxation mechanism
Yükleniyor...
Dosyalar
Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The study focused on the relaxation and polarisation mechanisms of Al/(rGO:ZnO core-shell)/pSi/Al MOS structures. For this purpose, the rGO:ZnO core-shell structures were synthesised by sol-gel procedures and coated on pSi by spin-coating. The structures were characterized as chemical, morphological and micro-structural using FESEM-EDS, AFM, XRD and Raman analysis. Additionally, the capacitance (C), conductance (G/omega), dielectric permittivity (epsilon ' and epsilon ''), loss factor(tan delta), electric modulus(M ' and M '') of the samples were successfully examined by DS over the wide range of frequencies (100 Hz-1 MHz) for determining dielectric parameters. Three distinct regions were visible on the C-V and C-omega plots: accumulation (-4 to 0 V), depletion (0 to 2 V), and inversion (2 to 4 V). Two relaxation times (10(-4)s-10(-7)s) were obtained in epsilon '-V and epsilon '-omega graphs between 1-100 kHz (region 1) and 100 kHz-1 MHz (region 2). The relaxation times were according to the Maxwell-Wagner and dipolar polarisation mechanism. As a result, the capacitive effect was observed and the equivalent RC circuit obtained from the Cole-Cole diagrams allowed the samples to be used in energy storage or different electronic applications.
Açıklama
Anahtar Kelimeler
Core–Shell Structures, Dielectric Properties, MOS Devices, Reduced Graphene Oxide
Kaynak
Materials Science and Engineering: B
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
310
