Investigating ultra-thin rGO coated ZnO core-shell structures in MOS devices: electrical/dielectric characteristics and relaxation mechanism

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dc.contributor.authorKırkbınar, Mine
dc.contributor.authorİbrahimoğlu, Erhan
dc.contributor.authorDemir, Ahmet
dc.contributor.authorÇalışkan, Fatih
dc.date.accessioned2024-10-22T11:32:04Z
dc.date.available2024-10-22T11:32:04Z
dc.date.issued2024
dc.departmentFakülteler, Mühendislik Fakültesi, Nanoteknoloji Mühendisliği Bölümü
dc.description.abstractThe study focused on the relaxation and polarisation mechanisms of Al/(rGO:ZnO core-shell)/pSi/Al MOS structures. For this purpose, the rGO:ZnO core-shell structures were synthesised by sol-gel procedures and coated on pSi by spin-coating. The structures were characterized as chemical, morphological and micro-structural using FESEM-EDS, AFM, XRD and Raman analysis. Additionally, the capacitance (C), conductance (G/omega), dielectric permittivity (epsilon ' and epsilon ''), loss factor(tan delta), electric modulus(M ' and M '') of the samples were successfully examined by DS over the wide range of frequencies (100 Hz-1 MHz) for determining dielectric parameters. Three distinct regions were visible on the C-V and C-omega plots: accumulation (-4 to 0 V), depletion (0 to 2 V), and inversion (2 to 4 V). Two relaxation times (10(-4)s-10(-7)s) were obtained in epsilon '-V and epsilon '-omega graphs between 1-100 kHz (region 1) and 100 kHz-1 MHz (region 2). The relaxation times were according to the Maxwell-Wagner and dipolar polarisation mechanism. As a result, the capacitive effect was observed and the equivalent RC circuit obtained from the Cole-Cole diagrams allowed the samples to be used in energy storage or different electronic applications.
dc.description.sponsorshipSakarya University of Applied Sciences Scientific Research Project
dc.identifier.doi10.1016/j.mseb.2024.117722
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85204534915
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2024.117722
dc.identifier.urihttps://hdl.handle.net/11501/1538
dc.identifier.volume310
dc.identifier.wosWOS:001322459800001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorKırkbınar, Mine
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofMaterials Science and Engineering: B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCore–Shell Structures
dc.subjectDielectric Properties
dc.subjectMOS Devices
dc.subjectReduced Graphene Oxide
dc.titleInvestigating ultra-thin rGO coated ZnO core-shell structures in MOS devices: electrical/dielectric characteristics and relaxation mechanism
dc.typeArticle

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